IRF530
请求报价(RFQ)
- * 联系人姓名:
- * 公司:
- * 电子邮件:
- * 电话:
- * 评论:
- * 验证码:
-
- 制造商 :
- Harris Corporation
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 14A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 800 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 75W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 8A, 10V
- Supplier Device Package :
- TO-220AB
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- 数据列表
- IRF530
制造商相关产品
目录相关产品
相关产品
部分 | 制造商 | 库存 | 描述 |
---|---|---|---|
IRF510 | onsemi | 35,000 | MOSFET N-CH 100V 5.6A TO220AB |
IRF510 | Vishay | 35,000 | MOSFET N-CH 100V 5.6A TO220AB |
IRF510L | Vishay | 35,000 | MOSFET N-CH 100V 5.6A TO262-3 |
IRF510PBF | Vishay | 23,367 | MOSFET N-CH 100V 5.6A TO220AB |
IRF510PBF-BE3 | Vishay | 797 | MOSFET N-CH 100V 5.6A TO220AB |
IRF510S | Vishay | 35,000 | MOSFET N-CH 100V 5.6A D2PAK |
IRF510SPBF | Vishay | 22,730 | MOSFET N-CH 100V 5.6A D2PAK |
IRF510STRL | Vishay | 35,000 | MOSFET N-CH 100V 5.6A D2PAK |
IRF510STRLPBF | Vishay | 800 | MOSFET N-CH 100V 5.6A D2PAK |
IRF510STRR | Vishay | 35,000 | MOSFET N-CH 100V 5.6A D2PAK |
IRF510STRRPBF | Vishay | 158 | MOSFET N-CH 100V 5.6A TO263 |
IRF512 | Harris Corporation | 1,663 | N-CHANNEL POWER MOSFET |
IRF512S2532 | Harris Corporation | 35,000 | 4.9A, 100V, 0.74 OHM, N-CHANNEL |
IRF520 | Harris Corporation | 1,331 | MOSFET N-CH 100V 9.2A TO220AB |
IRF520 | onsemi | 35,000 | MOSFET N-CH 100V 9.2A TO220AB |