P3M06025K4

制造商 :

PN Junction Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

97A

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

15V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-4

Power Dissipation (Max) :

326W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

34mOhm @ 50A, 15V

Supplier Device Package :

TO-247-4L

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+20V, -8V

Vgs(th) (Max) @ Id :

2.2V @ 50mA (Typ)